2N6660 DATASHEET PDF

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Door to door logistic service within 3 days. Welcome to your attention, too! Dataasheet from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance and high gain.

PDF 2N6660 Datasheet ( Hoja de datos )

Allchips offer a warranty of days for each component. Analog Multiplexer Dual 4: Analog Multiplexer 26n660 4: Please contact sales office if device weight is not available. Pd – Power Dissipation. Buy from the Microchip Store. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.

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Application Notes Download All. Vds – Drain-Source Breakdown Voltage.

This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Inquiry Add to Cart. For pricing and availability, contact Microchip Local Sales.

2N6660 Datasheet

Sampling Options Buy Now. We have engaged in the electronic components industry over 10 years. Allchips offer professional product life cycle datasheet and replacement suggestions. If comprehensive data for 2N to optimize the supply chain, including costdown, time-saving, cross references, parametric, counterfeit risk, alternative components, obsolescence management forecasts is expected, please contact our professional team.

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Microchip 2N is available at Allchips. Apply for more decent price, contact us. Allchips focusing on the end users provides the intelligent BOM solution with the help of AI and big data. Vgs – gate-source voltage.

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In Production View Datasheet Features: Details Shipping Payment Method Guarantee. The maximum working temperature. Id – continuous drain current.

Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.