DISPOSITIVI PER LA MICROELETTRONICA GHIONE PDF

Suggested references are: G. Ghione Semiconductor Device for High-Speed Wiley (); G. Ghione Dispositivi per la Microelettronica, McGraw Hill (). Basics in solid state physics [Fonstad, Sze02, Singh, Ghione]. The pn junction Ghione, “Dispositivi per la microelettronica, Mc Graw-Hill, (Bibl. Tecn. G. Ghione, Dispositivi per la microelettronica, McGraw-Hill – J. P. Colinge, Semiconductor device physics – Muller-Kamins, Device electronics for integrated .

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Betti Beneventi 31 Output of the simulation: All the produced material will be made available on the course website as pdf files. Scaling in ICs [Fonstad, p. Carrato, 3 cfu Basics in solid state physics [Fonstad, Sze02, Singh, Ghione] The pn junction [Sze02, chap. Betti Beneventi 48 Electrical characteristics: Betti Beneventi 9 Secondary effects 1. The minority carrier profile it kicroelettronica approximated with a linear behavior if there is no generation-recombination i.

Betti Beneventi 32 Output of the simulation: If material parameters must not be modified compared to the default values, even an empty file will do the job. The exams consists in three oral tests, one for each part; a small project is also required for the third part.

Le esercitazioni in aula permetteranno agli studenti di applicare in modo quantitativo i modelli ricavati a lezione per eterostrutture e per i principali dispositivi che le utilizzino. Betti Beneventi 12 SWB: Betti Beneventi 45 Electrical characteristics: In forward bias the diode is conducting, ideally as a short circuit. Betti Beneventi 38 Post-processing: Teacher Status SSD h. A Design Perspective, Prentice Hall, The exam is made of a 2 hour written test and of a voluntary oral examination.

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Simplest possible semiconductor device displsitivi made by a so-called pn-junction. Betti Beneventi 17 SDE command file 4 sdedr: Il voto finale viene determinato tenendo conto sia della prova scritta che della prova orale. Betti Beneventi 51 Uniform doping: As a result of diffusion, some dopants near the junction are depleted of free charge i. At a critical field, the carriers have enough kinetic energy to create electron-hole pairs by collisions with the lattice silicon atoms. Betti Beneventi 36 Post-processing: Homework exercises are also provided in.

Betti Beneventi 19 Sdevice: It can be shown that the minority carrier concentration is exponentially decreasing from the junction line. Ng, Physics of semiconductor devices, Wiley ; G.

Betti Beneventi 25 Sdevice: Documents Flashcards Grammar checker. Betti Beneventi 42 Post-processing: Convergence is achieved if error is smaller than one. Betti Beneventi 50 Uniform doping: Betti Beneventi 4 The diode: Corsi di Studio Units. Finally, is called the ideality factor, miroelettronica is a number between 1 and 2; the more the generation-recombination phenomena are important, the more its values approaches 2.

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Electronic Devices and Components

Cautero, 3 cfu This teaching module is centered on the designa and the development of an instrument which will be used in an experiment at the Elettra Synchrotron Radiation Facility. A Quantum Optical Diod. Integrated circuit IC production technology [Hastings, chap.

Practice classes will pet the students to quantitatively apply the equations derived in class on semiconductor heterostructures and for the main heterostructure devices. Carrato, 3 cfu Type of Learning Activity.

ELECTRONICS II (218MI)

Another possible breakdown mechanism is the Zener breakdown which is due to band-to-band-tunneling. Betti Beneventi 49 Uniform doping: Betti Beneventi 40 Post-processing: Betti Beneventi 37 Post-processing: Phase diagrams and vortex pinning studies of multiband.

Course statistics – enrollment and graduations data. In this regime, the diode is said to be reverse biased.

Dispositivi per la microelettronica – Giovanni Ghione – Google Books

The value of the three parts is approximately the same. The course includes an introductory overview of optoelectronics and optoelectronic microelettroinca, such as photodetectors and electo-optic modulators, and a brief description of power semiconductor devices.

Compilazion and debugging tools. The final grade is obtained combining both the written and oral part partial grades.